HS567 替代 MH254 TWS充电仓 专用 霍尔开关

General Description

The HS567 Unipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It

incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch

points.

The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall

element and analog signal processing circuits.This serves to place the high current-cons uming portions of

the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the

magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is

above or below the B OP/BRP thresholds then the output transistor is driven to change states

accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design

has been optimized for service in applications requiring extended operating lifetime in battery powered

systems.

The output transistor of the HS567 will be latched on (BOP) in the presence of a sufficiently

strong North magnetic field facing the marked side of the package. The output will be latched off (BRP)

in the absence of amagnetic field.It incorporates advanced chopper-stabilization techniques to provide

accurate and stable magnetic switch points.

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